NCE8290 Datasheet, Mosfet, NCE Power Semiconductor

✔ NCE8290 Features

VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully ch

✔ NCE8290 Application

General Features
VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ)
Special process technology

PDF File Details

NCE Power Semiconductor manufacturer logo

Part number:

NCE8290

Manufacturer:

NCE Power Semiconductor

File Size:

335.59kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

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NCE8290 N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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